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Growth of Crack-Free GaN Films on Si(111) Substrates with AIN Buffer Layers
Growth of Crack-Free GaN Films on Si(111) Substrates with AIN Buffer Layers
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Doek Kyu Kim
- 서명/저자
- Growth of Crack-Free GaN Films on Si(111) Substrates with AIN Buffer Layers / Doek Kyu Kim , Choon Bae Park
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 1497-1500
- 기타저자
- Choon Bae Park
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60144820
MARC
008101012s2006 ulka a eng■022 ▼a03744884
■1001 ▼aDoek Kyu Kim
■24510▼aGrowth of Crack-Free GaN Films on Si(111) Substrates with AIN Buffer Layers▼dDoek Kyu Kim▼eChoon Bae Park
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 1497-1500
■7001 ▼aChoon Bae Park
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 No. 4 (2006. 10)▼d2006, 10
■SIS ▼aS035357▼b60077342▼h8▼s2▼fP
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