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Dependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Dependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Y. W. Kim
- 서명/저자
- Dependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness / Y. W. Kim , E. S. Nam , S. E. Hong , B. W. Kim , H. D. Cheong
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 1202-1206
- 기타저자
- E. S. Nam
- 기타저자
- S. E. Hong
- 기타저자
- B. W. Kim
- 기타저자
- H. D. Cheong
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60144224
MARC
008101007s2006 ulka a eng■022 ▼a03744884
■1001 ▼aY. W. Kim
■24510▼aDependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness▼dY. W. Kim▼eE. S. Nam▼eS. E. Hong▼eB. W. Kim▼eH. D. Cheong
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 1202-1206
■7001 ▼aE. S. Nam
■7001 ▼aS. E. Hong
■7001 ▼aB. W. Kim
■7001 ▼aH. D. Cheong
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 No. 3 (2006. 9)▼d2006, 09
■SIS ▼aS034322▼b60077342▼h8▼s2▼fP
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