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Enhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlｘGa₁-xAs Cladding Layer
Enhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlｘGa₁-xAs Cladding Layer
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- kwang Woong Kim
- 서명/저자
- Enhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlｘGa₁-xAs Cladding Layer / kwang Woong Kim , Jin Dong Song , Won Jun Choi , Jung Il Lee , Jung Ho Park
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 1169-1172
- 기타저자
- Jin Dong Song
- 기타저자
- Won Jun Choi
- 기타저자
- Jung Il Lee
- 기타저자
- Jung Ho Park
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60144170
MARC
008101006s2006 ulka a eng■022 ▼a03744884
■1001 ▼akwang Woong Kim
■24510▼aEnhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlｘGa₁-xAs Cladding Layer▼dkwang Woong Kim▼eJin Dong Song▼eWon Jun Choi▼eJung Il Lee▼eJung Ho Park
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 1169-1172
■7001 ▼aJin Dong Song
■7001 ▼aWon Jun Choi
■7001 ▼aJung Il Lee
■7001 ▼aJung Ho Park
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 No. 3 (2006. 9)▼d2006, 09
■SIS ▼aS034322▼b60077342▼h8▼s2▼fP
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