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Effects of the Annealing Temperature on the Electrical Properties of p-Type ZnO Films Grown on (0001) Sapphire Suvstrates by Using Atomic Layer Epitaxy
Effects of the Annealing Temperature on the Electrical Properties of p-Type ZnO Films Grown on (0001) Sapphire Suvstrates by Using Atomic Layer Epitaxy
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Chongmu Lee
- 서명/저자
- Effects of the Annealing Temperature on the Electrical Properties of p-Type ZnO Films Grown on (0001) Sapphire Suvstrates by Using Atomic Layer Epitaxy / Chongmu Lee , Jongmin Lim
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 913-917
- 기타저자
- Jongmin Lim
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60144066
MARC
008101001s2006 ulka a eng■022 ▼a03744884
■1001 ▼aChongmu Lee
■24510▼aEffects of the Annealing Temperature on the Electrical Properties of p-Type ZnO Films Grown on (0001) Sapphire Suvstrates by Using Atomic Layer Epitaxy▼dChongmu Lee▼eJongmin Lim
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 913-917
■7001 ▼aJongmin Lim
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 No. 3 (2006. 9)▼d2006, 09
■SIS ▼aS034322▼b60077342▼h8▼s2▼fP
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