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Selective Epitaxial Growth of SiGe on a SOI Substrate by Using Ultra-High-Vacuum Chemical Vapor Deposition
Selective Epitaxial Growth of SiGe on a SOI Substrate by Using Ultra-High-Vacuum Chemical Vapor Deposition
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Hoon Choi
- 서명/저자
- Selective Epitaxial Growth of SiGe on a SOI Substrate by Using Ultra-High-Vacuum Chemical Vapor Deposition / Hoon Choi , Ji Chul Bae , dae Wha Soh , Sang Jeen Hong
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 648-652
- 기타저자
- Ji Chul Bae
- 기타저자
- dae Wha Soh
- 기타저자
- Sang Jeen Hong
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60144019
MARC
008100928s2006 ulka a eng■022 ▼a03744884
■1001 ▼aHoon Choi
■24510▼aSelective Epitaxial Growth of SiGe on a SOI Substrate by Using Ultra-High-Vacuum Chemical Vapor Deposition▼dHoon Choi▼eJi Chul Bae▼edae Wha Soh▼eSang Jeen Hong
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 648-652
■7001 ▼aJi Chul Bae
■7001 ▼adae Wha Soh
■7001 ▼aSang Jeen Hong
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 4 (2006. 4)▼d2006, 04
■SIS ▼aS028401▼b60077342▼h8▼s2▼fP
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