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Growth of Cubic GaN on a Nitrided AlGaAs(001) Substrate by Using Hydried Vapor Phase Epitaxy
Growth of Cubic GaN on a Nitrided AlGaAs(001) Substrate by Using Hydried Vapor Phase Epitaxy
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- H. J. Lee
- Title/Author
- Growth of Cubic GaN on a Nitrided AlGaAs(001) Substrate by Using Hydried Vapor Phase Epitaxy / H. J. Lee ; M. Yang ; H. S. Ahn ; K. H. Kim ; J. Y. Yi ; K. S. Jang ; J. H. Chang ; H. S. Kim ; C. R. Cho ; S. W. Kim
- Publish Info
- 서울 : 한국물리학회, 2006.
- Material Info
- pp. 266-270
- Added Entry-Personal Name
- M. Yang
- Added Entry-Personal Name
- H. S. Ahn
- Added Entry-Personal Name
- K. H. Kim
- Added Entry-Personal Name
- J. Y. Yi
- Added Entry-Personal Name
- K. S. Jang
- Added Entry-Personal Name
- J. H. Chang
- Added Entry-Personal Name
- H. S. Kim
- Added Entry-Personal Name
- C. R. Cho
- Added Entry-Personal Name
- S. W. Kim
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60143882
MARC
008100927s2006 ulka a eng■022 ▼a03744884
■1001 ▼aH. J. Lee
■24510▼aGrowth of Cubic GaN on a Nitrided AlGaAs(001) Substrate by Using Hydried Vapor Phase Epitaxy▼dH. J. Lee▼eM. Yang▼eH. S. Ahn▼eK. H. Kim▼eJ. Y. Yi▼eK. S. Jang▼eJ. H. Chang▼eH. S. Kim▼eC. R. Cho▼eS. W. Kim
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 266-270
■7001 ▼aM. Yang
■7001 ▼aH. S. Ahn
■7001 ▼aK. H. Kim
■7001 ▼aJ. Y. Yi
■7001 ▼aK. S. Jang
■7001 ▼aJ. H. Chang
■7001 ▼aH. S. Kim
■7001 ▼aC. R. Cho
■7001 ▼aS. W. Kim
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 2 (2006. 2)▼d2006, 02
■SIS ▼aS028399▼b60077342▼h8▼s2▼fP
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