서브메뉴
검색
Electronic Properties of 1.3 ㎛ GaAsSbN/GaAs Quantum-Well Structure
Electronic Properties of 1.3 ㎛ GaAsSbN/GaAs Quantum-Well Structure
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- Seoung-Hwan Park
- Title/Author
- Electronic Properties of 1.3 ㎛ GaAsSbN/GaAs Quantum-Well Structure / Seoung-Hwan Park
- Publish Info
- 서울 : 한국물리학회, 2006.
- Material Info
- pp. 472-475
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60143845
MARC
008100924s2006 ulka a eng■022 ▼a03744884
■1001 ▼aSeoung-Hwan Park
■24510▼aElectronic Properties of 1.3 ㎛ GaAsSbN/GaAs Quantum-Well Structure▼dSeoung-Hwan Park
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 472-475
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 3 (2006. 3)▼d2006, 03
■SIS ▼aS028400▼b60077342▼h8▼s2▼fP
Preview
Export
ChatGPT Discussion
AI Recommended Related Books
Detail Info.
- Reservation
- Not Exist
- My Folder
- Reference Materials for Thesis Writing
- Reference Materials for Research Ethics
- Job-Related Books
