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Characteristics of Al2O3 Thin Films Deposited Using Dimethyalluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
Characteristics of Al2O3 Thin Films Deposited Using Dimethyalluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Jaehyoung Koo
- 서명/저자
- Characteristics of Al2O3 Thin Films Deposited Using Dimethyalluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method / Jaehyoung Koo , Seokhoon Kim , Sangmin Jeon , Hyeongtag Jeon , Yangdo Kim , Youngdo Won
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 131-136
- 기타저자
- Seokhoon Kim
- 기타저자
- Sangmin Jeon
- 기타저자
- Hyeongtag Jeon
- 기타저자
- Yangdo Kim
- 기타저자
- Youngdo Won
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60143633
MARC
008100917s2006 ulka a eng■022 ▼a03744884
■1001 ▼aJaehyoung Koo
■24510▼aCharacteristics of Al2O3 Thin Films Deposited Using Dimethyalluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method▼dJaehyoung Koo▼eSeokhoon Kim▼eSangmin Jeon▼eHyeongtag Jeon▼eYangdo Kim▼eYoungdo Won
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 131-136
■7001 ▼aSeokhoon Kim
■7001 ▼aSangmin Jeon
■7001 ▼aHyeongtag Jeon
■7001 ▼aYangdo Kim
■7001 ▼aYoungdo Won
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 1 (2006. 1)▼d2006, 01
■SIS ▼aS028398▼b60077342▼h8▼s2▼fP
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