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Low-dislocation-density large-diameter GaAs single crystal grown by vertical Bridgman method
Low-dislocation-density large-diameter GaAs single crystal grown by vertical Bridgman method
Detailed Information
- 자료유형
- 기사
- ISSN
- 12251429
- 저자명
- Tomohiro Kawase
- 서명/저자
- Low-dislocation-density large-diameter GaAs single crystal grown by vertical Bridgman method / Tomohiro Kawase , Masami Tatsumi , Keiichiro Fujita
- 발행사항
- 서울 : 한국결정성장학회, 1999.
- 형태사항
- pp. 535-541
- 기타저자
- Masami Tatsumi
- 기타저자
- Keiichiro Fujita
- 기본자료저록
- Journal of the Korean Crystal Growth and Crystal Technology : Vol. 9 No. 6 (1999년 12월) 1999, 12
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60142657
MARC
008100830s1999 ulka a kor■022 ▼a12251429
■1001 ▼aTomohiro Kawase
■24510▼aLow-dislocation-density large-diameter GaAs single crystal grown by vertical Bridgman method▼dTomohiro Kawase▼eMasami Tatsumi▼eKeiichiro Fujita
■260 ▼a서울▼b한국결정성장학회▼c1999.
■300 ▼app. 535-541
■7001 ▼aMasami Tatsumi
■7001 ▼aKeiichiro Fujita
■773 ▼tJournal of the Korean Crystal Growth and Crystal Technology▼gVol. 9 No. 6 (1999년 12월)▼d1999, 12
■SIS ▼aS034033▼b60077034▼h8▼s2▼fP
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