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Background impurity incorporation in the growth of InP by hydride vapor phase epitaxy technique
Background impurity incorporation in the growth of InP by hydride vapor phase epitaxy technique
Detailed Information
- 자료유형
- 기사
- ISSN
- 12251429
- 저자명
- Chinho Park
- 서명/저자
- Background impurity incorporation in the growth of InP by hydride vapor phase epitaxy technique / Chinho Park
- 발행사항
- 서울 : 한국결정성장학회, 1996.
- 형태사항
- pp. 141-154
- 기본자료저록
- Journal of the Korean Crystal Growth and Crystal Technology : Vol. 6 No. 2 (1996년 5월) 1996, 05
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60142610
MARC
008100830s1996 ulka a kor■022 ▼a12251429
■1001 ▼aChinho Park
■24510▼aBackground impurity incorporation in the growth of InP by hydride vapor phase epitaxy technique▼dChinho Park
■260 ▼a서울▼b한국결정성장학회▼c1996.
■300 ▼app. 141-154
■773 ▼tJournal of the Korean Crystal Growth and Crystal Technology▼gVol. 6 No. 2 (1996년 5월)▼d1996, 05
■SIS ▼aS034025▼b60077034▼h8▼s2▼fP
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