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Silicon Dioxide Deposited by Using Liquid Phase Deposition at Room Temperature for Nanometer-Scaled Isolation Technology
Silicon Dioxide Deposited by Using Liquid Phase Deposition at Room Temperature for Nanometer-Scaled Isolation Technology
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Kyoung Seob Kim
- 서명/저자
- Silicon Dioxide Deposited by Using Liquid Phase Deposition at Room Temperature for Nanometer-Scaled Isolation Technology / Kyoung Seob Kim , Yonghan Roh
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 1191-1194
- 기타저자
- Yonghan Roh
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60141836
MARC
008100820s2007 ulka a eng■022 ▼a03744884
■1001 ▼aKyoung Seob Kim
■24510▼aSilicon Dioxide Deposited by Using Liquid Phase Deposition at Room Temperature for Nanometer-Scaled Isolation Technology▼dKyoung Seob Kim▼eYonghan Roh
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 1191-1194
■7001 ▼aYonghan Roh
■773 ▼tJournal of The Korean Physical Society▼gVol. 51 No. 3 (2007. 9)▼d2007, 09
■SIS ▼aS043255▼b60077342▼h8▼s2▼fP
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