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Modified CeO2 Deposition Process for High-k Oxide Gate Dielectrics
Modified CeO2 Deposition Process for High-k Oxide Gate Dielectrics
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- D.G.Lim
- Title/Author
- Modified CeO2 Deposition Process for High-k Oxide Gate Dielectrics / D.G.Lim ; G.S.Kang ; J.H.Yi ; K.J.Yang ; J.H.Lee
- Publish Info
- 서울 : 한국물리학회, 2007.
- Material Info
- pp. 1085-1088
- Added Entry-Personal Name
- G.S.Kang
- Added Entry-Personal Name
- J.H.Yi
- Added Entry-Personal Name
- K.J.Yang
- Added Entry-Personal Name
- J.H.Lee
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60141671
MARC
008100819s2007 ulka a eng■022 ▼a03744884
■1001 ▼aD.G.Lim
■24510▼aModified CeO2 Deposition Process for High-k Oxide Gate Dielectrics▼dD.G.Lim▼eG.S.Kang▼eJ.H.Yi▼eK.J.Yang▼eJ.H.Lee
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 1085-1088
■7001 ▼aG.S.Kang
■7001 ▼aJ.H.Yi
■7001 ▼aK.J.Yang
■7001 ▼aJ.H.Lee
■773 ▼tJournal of The Korean Physical Society▼gVol. 51 No. 3 (2007. 9)▼d2007, 09
■SIS ▼aS043255▼b60077342▼h8▼s2▼fP
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