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Modified CeO2 Deposition Process for High-k Oxide Gate Dielectrics
Modified CeO2 Deposition Process for High-k Oxide Gate Dielectrics
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MARC
008100819s2007 ulka a eng■022 ▼a03744884
■1001 ▼aD.G.Lim
■24510▼aModified CeO2 Deposition Process for High-k Oxide Gate Dielectrics▼dD.G.Lim▼eG.S.Kang▼eJ.H.Yi▼eK.J.Yang▼eJ.H.Lee
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 1085-1088
■7001 ▼aG.S.Kang
■7001 ▼aJ.H.Yi
■7001 ▼aK.J.Yang
■7001 ▼aJ.H.Lee
■773 ▼tJournal of The Korean Physical Society▼gVol. 51 No. 3 (2007. 9)▼d2007, 09
■SIS ▼aS043255▼b60077342▼h8▼s2▼fP
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