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Characterization of GOI-MISFET with a High-k Gate Dielectric and Metal Gate Fabricated by Using a New Graded Ge Condenstion Method
Characterization of GOI-MISFET with a High-k Gate Dielectric and Metal Gate Fabricated by Using a New Graded Ge Condenstion Method
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Mungi Park
- 서명/저자
- Characterization of GOI-MISFET with a High-k Gate Dielectric and Metal Gate Fabricated by Using a New Graded Ge Condenstion Method / Mungi Park , Won Seok Choi
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 1080-1084
- 기타저자
- Won Seok Choi
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60141665
MARC
008100819s2007 ulka a eng■022 ▼a03744884
■1001 ▼aMungi Park
■24510▼aCharacterization of GOI-MISFET with a High-k Gate Dielectric and Metal Gate Fabricated by Using a New Graded Ge Condenstion Method▼dMungi Park▼eWon Seok Choi
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 1080-1084
■7001 ▼aWon Seok Choi
■773 ▼tJournal of The Korean Physical Society▼gVol. 51 No. 3 (2007. 9)▼d2007, 09
■SIS ▼aS043255▼b60077342▼h8▼s2▼fP
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