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Properties of SiOxNy Thin Films Deposited with a Single Molecular Precursor by Using RF PECVD
Properties of SiOxNy Thin Films Deposited with a Single Molecular Precursor by Using RF PECVD
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- C.-K.Jung
- 서명/저자
- Properties of SiOxNy Thin Films Deposited with a Single Molecular Precursor by Using RF PECVD / C.-K.Jung , S.-H.Jeong , I.-S.Bae , J.-H.Boo , W.S.Choi
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 1069-1072
- 기타저자
- S.-H.Jeong
- 기타저자
- I.-S.Bae
- 기타저자
- J.-H.Boo
- 기타저자
- W.S.Choi
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60141650
MARC
008100819s2007 ulka a eng■022 ▼a03744884
■1001 ▼aC.-K.Jung
■24510▼aProperties of SiOxNy Thin Films Deposited with a Single Molecular Precursor by Using RF PECVD▼dC.-K.Jung▼eS.-H.Jeong▼eI.-S.Bae▼eJ.-H.Boo▼eW.S.Choi
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 1069-1072
■7001 ▼aS.-H.Jeong
■7001 ▼aI.-S.Bae
■7001 ▼aJ.-H.Boo
■7001 ▼aW.S.Choi
■773 ▼tJournal of The Korean Physical Society▼gVol. 51 No. 3 (2007. 9)▼d2007, 09
■SIS ▼aS043255▼b60077342▼h8▼s2▼fP
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