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Formation and Characteristics of Self-Assembled InGaN/GaN Quantum-Dot Structure Grown by Using Plasma-Assisted Molecular Beam Epitaxy
Formation and Characteristics of Self-Assembled InGaN/GaN Quantum-Dot Structure Grown by Using Plasma-Assisted Molecular Beam Epitaxy
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- S.J.Lee
- Title/Author
- Formation and Characteristics of Self-Assembled InGaN/GaN Quantum-Dot Structure Grown by Using Plasma-Assisted Molecular Beam Epitaxy / S.J.Lee ; J.O.Kim ; S.K.Noh ; K.-S.Lee
- Publish Info
- 서울 : 한국물리학회, 2007.
- Material Info
- pp. 1027-1031
- Added Entry-Personal Name
- J.O.Kim
- Added Entry-Personal Name
- S.K.Noh
- Added Entry-Personal Name
- K.-S.Lee
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60141611
MARC
008100819s2007 ulka a eng■022 ▼a03744884
■1001 ▼aS.J.Lee
■24510▼aFormation and Characteristics of Self-Assembled InGaN/GaN Quantum-Dot Structure Grown by Using Plasma-Assisted Molecular Beam Epitaxy▼dS.J.Lee▼eJ.O.Kim▼eS.K.Noh▼eK.-S.Lee
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 1027-1031
■7001 ▼aJ.O.Kim
■7001 ▼aS.K.Noh
■7001 ▼aK.-S.Lee
■773 ▼tJournal of The Korean Physical Society▼gVol. 51 No. 3 (2007. 9)▼d2007, 09
■SIS ▼aS043255▼b60077342▼h8▼s2▼fP
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