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Formation and Characteristics of Self-Assembled InGaN/GaN Quantum-Dot Structure Grown by Using Plasma-Assisted Molecular Beam Epitaxy
Formation and Characteristics of Self-Assembled InGaN/GaN Quantum-Dot Structure Grown by Using Plasma-Assisted Molecular Beam Epitaxy
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- S.J.Lee
- 서명/저자
- Formation and Characteristics of Self-Assembled InGaN/GaN Quantum-Dot Structure Grown by Using Plasma-Assisted Molecular Beam Epitaxy / S.J.Lee , J.O.Kim , S.K.Noh , K.-S.Lee
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 1027-1031
- 기타저자
- J.O.Kim
- 기타저자
- S.K.Noh
- 기타저자
- K.-S.Lee
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60141611
MARC
008100819s2007 ulka a eng■022 ▼a03744884
■1001 ▼aS.J.Lee
■24510▼aFormation and Characteristics of Self-Assembled InGaN/GaN Quantum-Dot Structure Grown by Using Plasma-Assisted Molecular Beam Epitaxy▼dS.J.Lee▼eJ.O.Kim▼eS.K.Noh▼eK.-S.Lee
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 1027-1031
■7001 ▼aJ.O.Kim
■7001 ▼aS.K.Noh
■7001 ▼aK.-S.Lee
■773 ▼tJournal of The Korean Physical Society▼gVol. 51 No. 3 (2007. 9)▼d2007, 09
■SIS ▼aS043255▼b60077342▼h8▼s2▼fP
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