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Characterization and Fabrication of InAs Quantum-Dot/GaAs Resonant-Cavity Separate Absorption, Charge and Multiplication Avalanche Photodiodes
Characterization and Fabrication of InAs Quantum-Dot/GaAs Resonant-Cavity Separate Absorption, Charge and Multiplication Avalanche Photodiodes
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- H. J. Song
- 서명/저자
- Characterization and Fabrication of InAs Quantum-Dot/GaAs Resonant-Cavity Separate Absorption, Charge and Multiplication Avalanche Photodiodes / H. J. Song , C. H. Roh , C. -K. Hahn , D. H. Kim
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 163-167
- 기타저자
- C. H. Roh
- 기타저자
- C. -K. Hahn
- 기타저자
- D. H. Kim
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60141268
MARC
008100816s2007 ulka a eng■022 ▼a03744884
■1001 ▼aH. J. Song
■24510▼aCharacterization and Fabrication of InAs Quantum-Dot/GaAs Resonant-Cavity Separate Absorption, Charge and Multiplication Avalanche Photodiodes▼dH. J. Song▼eC. H. Roh▼eC. -K. Hahn▼eD. H. Kim
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 163-167
■7001 ▼aC. H. Roh
■7001 ▼aC. -K. Hahn
■7001 ▼aD. H. Kim
■773 ▼tJournal of The Korean Physical Society▼gVol. 51 No. 1 Pt.1 (2007. 7)▼d2007, 07
■SIS ▼aS041108▼b60077342▼h8▼s2▼fP
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