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p-Type GaN Growth from a Single GaN Precursor via Molecular Beam Epitaxy and Dopant Activation
p-Type GaN Growth from a Single GaN Precursor via Molecular Beam Epitaxy and Dopant Activation
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- Cunxu Gao
- Title/Author
- p-Type GaN Growth from a Single GaN Precursor via Molecular Beam Epitaxy and Dopant Activation / Cunxu Gao ; Fucheng Yu ; Dojin Kim ; Hyojin Kim ; Young Eon Ihm ; Chang Gyoun Kim ; Chang Soo Kim
- Publish Info
- 서울 : 한국물리학회, 2007.
- Material Info
- pp. 112-119
- Added Entry-Personal Name
- Fucheng Yu
- Added Entry-Personal Name
- Dojin Kim
- Added Entry-Personal Name
- Hyojin Kim
- Added Entry-Personal Name
- Young Eon Ihm
- Added Entry-Personal Name
- Chang Gyoun Kim
- Added Entry-Personal Name
- Chang Soo Kim
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60141255
MARC
008100816s2007 ulka a eng■022 ▼a03744884
■1001 ▼aCunxu Gao
■24510▼ap-Type GaN Growth from a Single GaN Precursor via Molecular Beam Epitaxy and Dopant Activation▼dCunxu Gao▼eFucheng Yu▼eDojin Kim▼eHyojin Kim▼eYoung Eon Ihm▼eChang Gyoun Kim▼eChang Soo Kim
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 112-119
■7001 ▼aFucheng Yu
■7001 ▼aDojin Kim
■7001 ▼aHyojin Kim
■7001 ▼aYoung Eon Ihm
■7001 ▼aChang Gyoun Kim
■7001 ▼aChang Soo Kim
■773 ▼tJournal of The Korean Physical Society▼gVol. 51 No. 1 Pt.1 (2007. 7)▼d2007, 07
■SIS ▼aS041108▼b60077342▼h8▼s2▼fP
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