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Study on the Effect of Nitrogen-Ion Implantation in Semi-Insulating InP by Using Scanning Tunneling Microscopy
Study on the Effect of Nitrogen-Ion Implantation in Semi-Insulating InP by Using Scanning Tunneling Microscopy
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- P. Jayavel
- 서명/저자
- Study on the Effect of Nitrogen-Ion Implantation in Semi-Insulating InP by Using Scanning Tunneling Microscopy / P. Jayavel , M. Haris , Y. Hayakawa , K. Santhakumar , C. R. Lee , T. Soga , K. Asokan
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 585-588
- 기타저자
- M. Haris
- 기타저자
- Y. Hayakawa
- 기타저자
- K. Santhakumar
- 기타저자
- C. R. Lee
- 기타저자
- T. Soga
- 기타저자
- K. Asokan
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60141228
MARC
008100816s2007 ulka a eng■022 ▼a03744884
■1001 ▼aP. Jayavel
■24510▼aStudy on the Effect of Nitrogen-Ion Implantation in Semi-Insulating InP by Using Scanning Tunneling Microscopy▼dP. Jayavel▼eM. Haris▼eY. Hayakawa▼eK. Santhakumar▼eC. R. Lee▼eT. Soga▼eK. Asokan
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 585-588
■7001 ▼aM. Haris
■7001 ▼aY. Hayakawa
■7001 ▼aK. Santhakumar
■7001 ▼aC. R. Lee
■7001 ▼aT. Soga
■7001 ▼aK. Asokan
■773 ▼tJournal of The Korean Physical Society▼gVol. 51 No. 2 (2007. 8)▼d2007, 08
■SIS ▼aS041152▼b60077342▼h8▼s2▼fP
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