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Study on the Effect of Nitrogen-Ion Implantation in Semi-Insulating InP by Using Scanning Tunneling Microscopy
Study on the Effect of Nitrogen-Ion Implantation in Semi-Insulating InP by Using Scanning Tunneling Microscopy
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- P. Jayavel
- Title/Author
- Study on the Effect of Nitrogen-Ion Implantation in Semi-Insulating InP by Using Scanning Tunneling Microscopy / P. Jayavel ; M. Haris ; Y. Hayakawa ; K. Santhakumar ; C. R. Lee ; T. Soga ; K. Asokan
- Publish Info
- 서울 : 한국물리학회, 2007.
- Material Info
- pp. 585-588
- Added Entry-Personal Name
- M. Haris
- Added Entry-Personal Name
- Y. Hayakawa
- Added Entry-Personal Name
- K. Santhakumar
- Added Entry-Personal Name
- C. R. Lee
- Added Entry-Personal Name
- T. Soga
- Added Entry-Personal Name
- K. Asokan
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60141228
MARC
008100816s2007 ulka a eng■022 ▼a03744884
■1001 ▼aP. Jayavel
■24510▼aStudy on the Effect of Nitrogen-Ion Implantation in Semi-Insulating InP by Using Scanning Tunneling Microscopy▼dP. Jayavel▼eM. Haris▼eY. Hayakawa▼eK. Santhakumar▼eC. R. Lee▼eT. Soga▼eK. Asokan
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 585-588
■7001 ▼aM. Haris
■7001 ▼aY. Hayakawa
■7001 ▼aK. Santhakumar
■7001 ▼aC. R. Lee
■7001 ▼aT. Soga
■7001 ▼aK. Asokan
■773 ▼tJournal of The Korean Physical Society▼gVol. 51 No. 2 (2007. 8)▼d2007, 08
■SIS ▼aS041152▼b60077342▼h8▼s2▼fP
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