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Study on the Effects of H+ and He+ Implantation in Semi-Insulating GaAs by Using Raman Spectroscopy
Study on the Effects of H+ and He+ Implantation in Semi-Insulating GaAs by Using Raman Spectroscopy
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- K. Santhakumar
- Title/Author
- Study on the Effects of H+ and He+ Implantation in Semi-Insulating GaAs by Using Raman Spectroscopy / K. Santhakumar ; J. S. Kim ; C. R. Lee ; Kesavamoorthy ; K. G. M. Nair ; P. Jayavel ; Y. Hayakawa ; T. Soga
- Publish Info
- 서울 : 한국물리학회, 2007.
- Material Info
- pp. 576-580
- Added Entry-Personal Name
- J. S. Kim
- Added Entry-Personal Name
- C. R. Lee
- Added Entry-Personal Name
- Kesavamoorthy
- Added Entry-Personal Name
- K. G. M. Nair
- Added Entry-Personal Name
- P. Jayavel
- Added Entry-Personal Name
- Y. Hayakawa
- Added Entry-Personal Name
- T. Soga
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60141226
MARC
008100816s2007 ulka a eng■022 ▼a03744884
■1001 ▼aK. Santhakumar
■24510▼aStudy on the Effects of H+ and He+ Implantation in Semi-Insulating GaAs by Using Raman Spectroscopy▼dK. Santhakumar ▼eJ. S. Kim▼eC. R. Lee▼eKesavamoorthy▼eK. G. M. Nair▼eP. Jayavel▼eY. Hayakawa▼eT. Soga
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 576-580
■7001 ▼aJ. S. Kim
■7001 ▼aC. R. Lee
■7001 ▼aKesavamoorthy
■7001 ▼aK. G. M. Nair
■7001 ▼aP. Jayavel
■7001 ▼aY. Hayakawa
■7001 ▼aT. Soga
■773 ▼tJournal of The Korean Physical Society▼gVol. 51 No. 2 (2007. 8)▼d2007, 08
■SIS ▼aS041152▼b60077342▼h8▼s2▼fP
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