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Study on the Effects of H+ and He+ Implantation in Semi-Insulating GaAs by Using Raman Spectroscopy
Study on the Effects of H+ and He+ Implantation in Semi-Insulating GaAs by Using Raman Spectroscopy
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- K. Santhakumar
- 서명/저자
- Study on the Effects of H+ and He+ Implantation in Semi-Insulating GaAs by Using Raman Spectroscopy / K. Santhakumar , J. S. Kim , C. R. Lee , Kesavamoorthy , K. G. M. Nair , P. Jayavel , Y. Hayakawa , T. Soga
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 576-580
- 기타저자
- J. S. Kim
- 기타저자
- C. R. Lee
- 기타저자
- Kesavamoorthy
- 기타저자
- K. G. M. Nair
- 기타저자
- P. Jayavel
- 기타저자
- Y. Hayakawa
- 기타저자
- T. Soga
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60141226
MARC
008100816s2007 ulka a eng■022 ▼a03744884
■1001 ▼aK. Santhakumar
■24510▼aStudy on the Effects of H+ and He+ Implantation in Semi-Insulating GaAs by Using Raman Spectroscopy▼dK. Santhakumar ▼eJ. S. Kim▼eC. R. Lee▼eKesavamoorthy▼eK. G. M. Nair▼eP. Jayavel▼eY. Hayakawa▼eT. Soga
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 576-580
■7001 ▼aJ. S. Kim
■7001 ▼aC. R. Lee
■7001 ▼aKesavamoorthy
■7001 ▼aK. G. M. Nair
■7001 ▼aP. Jayavel
■7001 ▼aY. Hayakawa
■7001 ▼aT. Soga
■773 ▼tJournal of The Korean Physical Society▼gVol. 51 No. 2 (2007. 8)▼d2007, 08
■SIS ▼aS041152▼b60077342▼h8▼s2▼fP
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