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Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors for NAno-Regime Applications
Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors for NAno-Regime Applications
Detailed Information
- 자료유형
- 기사
- ISSN
- 17388090
- 저자명
- Seongjae Lee
- 서명/저자
- Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors for NAno-Regime Applications / Seongjae Lee , Moongyu Jang , arkyeon Kim , yungsim Jeon , nd Kyoungwan Park
- 발행사항
- 서울 : 대한금속재료학회, 2005.
- 형태사항
- pp. 27-30
- 기타저자
- Moongyu Jang
- 기타저자
- arkyeon Kim
- 기타저자
- yungsim Jeon
- 기타저자
- nd Kyoungwan Park
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60132180
MARC
008100607s2005 ulka a eng■022 ▼a17388090
■1001 ▼aSeongjae Lee
■24510▼aSchottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors for NAno-Regime Applications▼dSeongjae Lee▼eMoongyu Jang▼earkyeon Kim▼eyungsim Jeon▼end Kyoungwan Park
■260 ▼a서울▼b대한금속재료학회▼c2005.
■300 ▼app. 27-30
■7001 ▼aMoongyu Jang
■7001 ▼aarkyeon Kim
■7001 ▼ayungsim Jeon
■7001 ▼and Kyoungwan Park
■773 ▼tELECTRONIC MATERIALS Letters▼gVol. 1 No. 1▼d2005, 11
■SIS ▼aS027262▼b60077032▼h8▼s2▼fP
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