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A 10-Gb/s Planar InGaAs/InP Avalanche Photodiode with a Thin Multiplication Layer Fabricated by Using Recess-Etching and Single-Diffusion Processes
A 10-Gb/s Planar InGaAs/InP Avalanche Photodiode with a Thin Multiplication Layer Fabricated by Using Recess-Etching and Single-Diffusion Processes
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Sungmin Hwang.
- 서명/저자
- A 10-Gb/s Planar InGaAs/InP Avalanche Photodiode with a Thin Multiplication Layer Fabricated by Using Recess-Etching and Single-Diffusion Processes / Sungmin Hwang. , Jongin Shim , Kyungyul Yoo.
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 253-260
- 키워드
- 10GBS PLANAR INGAASINP AVALANCHE PHOTODIODE MULTIPLICATION LAYER FABRICATED USING RECESSETCHING SINGLEDIFFUSION PROCESSES
- 기타저자
- Jongin Shim
- 기타저자
- Kyungyul Yoo.
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60097470
MARC
008070417s2006 ULKa a ENG■022 ▼a03744884
■1001 ▼aSungmin Hwang.
■245 ▼aA 10-Gb/s Planar InGaAs/InP Avalanche Photodiode with a Thin Multiplication Layer Fabricated by Using Recess-Etching and Single-Diffusion Processes ▼dSungmin Hwang. ▼eJongin Shim▼eKyungyul Yoo.
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 253-260
■653 ▼a10GBS▼aPLANAR▼aINGAASINP▼aAVALANCHE▼aPHOTODIODE▼aMULTIPLICATION▼aLAYER▼aFABRICATED▼aUSING▼aRECESSETCHING▼aSINGLEDIFFUSION▼aPROCESSES
■7001 ▼aJongin Shim
■7001 ▼aKyungyul Yoo.
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 No. 1 (2006. 7)▼d2006, 07
■URL ▼ahttp://www.kps.or.kr
■SIS ▼aS028404▼b60077342▼h8▼s2
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