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Formation of InAs/GaAs Quantum Dots by Alternate Growth of InAs and GaAs with a Quasi-Monolayer Thickness
Formation of InAs/GaAs Quantum Dots by Alternate Growth of InAs and GaAs with a Quasi-Monolayer Thickness
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Jong Su Kim.
- 서명/저자
- Formation of InAs/GaAs Quantum Dots by Alternate Growth of InAs and GaAs with a Quasi-Monolayer Thickness / Jong Su Kim. , Jin Soo Kim.
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 195-198
- 기타저자
- Jin Soo Kim.
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60097459
MARC
008070417s2006 ULKa a ENG■022 ▼a03744884
■1001 ▼aJong Su Kim.
■245 ▼aFormation of InAs/GaAs Quantum Dots by Alternate Growth of InAs and GaAs with a Quasi-Monolayer Thickness ▼dJong Su Kim. ▼eJin Soo Kim.
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 195-198
■653 ▼aFORMATION▼aINASGAAS▼aQUANTUM▼aDOTS▼aALTERNATE▼aGROWTH▼aINAS▼aGAAS▼aQUASIMONOLAYER▼aTHICKNESS
■7001 ▼aJin Soo Kim.
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 No. 1 (2006. 7)▼d2006, 07
■URL ▼ahttp://www.kps.or.kr
■SIS ▼aS028404▼b60077342▼h8▼s2
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