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Bonding Structure and Electrical Properties of SiOC(-H) Films Deposited with a Methyltrimethoxysilane Precursor by Using Inductively Coupled Plasma Chemical Vapor Deposition
Bonding Structure and Electrical Properties of SiOC(-H) Films Deposited with a Methyltrimethoxysilane Precursor by Using Inductively Coupled Plasma Chemical Vapor Deposition
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- Kannan Meera.
- Title/Author
- Bonding Structure and Electrical Properties of SiOC(-H) Films Deposited with a Methyltrimethoxysilane Precursor by Using Inductively Coupled Plasma Chemical Vapor Deposition / Kannan Meera. ; Chang Sil Yang ; Chi Kyu Choi.
- Publish Info
- 서울 : 한국물리학회, 2006.
- Material Info
- pp. 1713-1718
- Index Term-Uncontrolled
- BONDING STRUCTURE ELECTRICAL PROPERTIES SIOCH FILMS DEPOSITED METHYLTRIMETHOXYSILANE PRECURSOR USING INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION
- Added Entry-Personal Name
- Chang Sil Yang
- Added Entry-Personal Name
- Chi Kyu Choi.
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60097221
MARC
008070413s2006 ULKa a ENG■022 ▼a03744884
■1001 ▼aKannan Meera.
■245 ▼aBonding Structure and Electrical Properties of SiOC(-H) Films Deposited with a Methyltrimethoxysilane Precursor by Using Inductively Coupled Plasma Chemical Vapor Deposition ▼dKannan Meera. ▼eChang Sil Yang▼eChi Kyu Choi.
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 1713-1718
■653 ▼aBONDING▼aSTRUCTURE▼aELECTRICAL▼aPROPERTIES▼aSIOCH▼aFILMS▼aDEPOSITED▼aMETHYLTRIMETHOXYSILANE▼aPRECURSOR▼aUSING▼aINDUCTIVELY▼aCOUPLED▼aPLASMA▼aCHEMICAL▼aVAPOR▼aDEPOSITION
■7001 ▼aChang Sil Yang
■7001 ▼aChi Kyu Choi.
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 6 (2006. 6)▼d2006, 06
■URL ▼ahttp://www.kps.or.kr
■SIS ▼aS028403▼b60077342▼h8▼s2
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