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Impact of Si Impurities in HfO₂ : Threshold Voltage Problems in Poly-Si/HfO₂ Gate Stacks
Impact of Si Impurities in HfO₂ : Threshold Voltage Problems in Poly-Si/HfO₂ Gate Stacks
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Dae Yeon Kim.
- 서명/저자
- Impact of Si Impurities in HfO₂ : Threshold Voltage Problems in Poly-Si/HfO₂ Gate Stacks / Dae Yeon Kim , Joongoo Kang , K. J. Chang.
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 1628-1632
- 키워드
- IMPACT IMPURITIES HFO₂
- 기타저자
- Joongoo Kang
- 기타저자
- K. J. Chang.
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60097203
MARC
008070413s2006 ULKa a ENG■022 ▼a03744884
■1001 ▼aDae Yeon Kim.
■245 ▼aImpact of Si Impurities in HfO₂ ▼bThreshold Voltage Problems in Poly-Si/HfO₂ Gate Stacks ▼dDae Yeon Kim▼eJoongoo Kang▼eK. J. Chang.
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 1628-1632
■653 ▼aIMPACT▼aIMPURITIES▼aHFO₂
■7001 ▼aJoongoo Kang
■7001 ▼aK. J. Chang.
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 6 (2006. 6)▼d2006, 06
■URL ▼ahttp://www.kps.or.kr
■SIS ▼aS028403▼b60077342▼h8▼s2
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