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Nonvolatile Memory Characteristics in Metal-Oxide-Semiconductors Containing Metal Nanoparticles Fabricated by Using a Unique Laser Irradiation Method
Nonvolatile Memory Characteristics in Metal-Oxide-Semiconductors Containing Metal Nanoparticles Fabricated by Using a Unique Laser Irradiation Method
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Jungyup Yang.
- 서명/저자
- Nonvolatile Memory Characteristics in Metal-Oxide-Semiconductors Containing Metal Nanoparticles Fabricated by Using a Unique Laser Irradiation Method / Jungyup Yang. , Kapsoo Yoon , Juhyung Kim , Wonjun Choi , Youngho Do , Chaeok Kim , Jinpyo Hong.
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 1611-1615
- 키워드
- NONVOLATILE MEMORY CHARACTERISTICS METALOXIDESEMICONDUCTORS CONTAINING METAL NANOPARTICLES FABRICATED USING UNIQUE LASER IRRADIATION METHOD
- 기타저자
- Kapsoo Yoon
- 기타저자
- Juhyung Kim
- 기타저자
- Wonjun Choi
- 기타저자
- Youngho Do
- 기타저자
- Chaeok Kim
- 기타저자
- Jinpyo Hong.
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60097198
MARC
008070413s2006 ULKa a ENG■022 ▼a03744884
■1001 ▼aJungyup Yang.
■245 ▼aNonvolatile Memory Characteristics in Metal-Oxide-Semiconductors Containing Metal Nanoparticles Fabricated by Using a Unique Laser Irradiation Method ▼dJungyup Yang.▼eKapsoo Yoon▼eJuhyung Kim▼eWonjun Choi▼eYoungho Do▼eChaeok Kim▼eJinpyo Hong.
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 1611-1615
■653 ▼aNONVOLATILE▼aMEMORY▼aCHARACTERISTICS▼aMETALOXIDESEMICONDUCTORS▼aCONTAINING▼aMETAL▼aNANOPARTICLES▼aFABRICATED▼aUSING▼aUNIQUE▼aLASER▼aIRRADIATION▼aMETHOD
■7001 ▼aKapsoo Yoon
■7001 ▼aJuhyung Kim
■7001 ▼aWonjun Choi
■7001 ▼aYoungho Do
■7001 ▼aChaeok Kim
■7001 ▼aJinpyo Hong.
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 6 (2006. 6)▼d2006, 06
■URL ▼ahttp://www.kps.or.kr
■SIS ▼aS028403▼b60077342▼h8▼s2
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