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Al-Based Contacts on Ga-Face and N-Face N-GaN Wafer Grown by Using Hydride Vapor Phase Epitaxy
Al-Based Contacts on Ga-Face and N-Face N-GaN Wafer Grown by Using Hydride Vapor Phase Epitaxy
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Joon Seop Kwak.
- 서명/저자
- Al-Based Contacts on Ga-Face and N-Face N-GaN Wafer Grown by Using Hydride Vapor Phase Epitaxy / Joon Seop Kwak , Jaehee Cho , Cheolsoo Sone.
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 1259-1263
- 기타저자
- Jaehee Cho
- 기타저자
- Cheolsoo Sone.
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60096927
MARC
008070412s2006 ULKa a ENG■022 ▼a03744884
■1001 ▼aJoon Seop Kwak.
■245 ▼aAl-Based Contacts on Ga-Face and N-Face N-GaN Wafer Grown by Using Hydride Vapor Phase Epitaxy ▼dJoon Seop Kwak▼eJaehee Cho▼eCheolsoo Sone.
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 1259-1263
■653 ▼aALBASED▼aCONTACTS▼aGAFACE▼aNFACE▼aNGAN▼aWAFER▼aGROWN▼aUSING▼aHYDRIDE▼aVAPOR▼aPHASE▼aEPITAXY
■7001 ▼aJaehee Cho
■7001 ▼aCheolsoo Sone.
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 6 (2006. 6)▼d2006, 06
■URL ▼ahttp://www.kps.or.kr
■SIS ▼aS028403▼b60077342▼h8▼s2
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