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The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- D. H. Shin.
- Title/Author
- The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers / D. H. Shin ; M. K. Bae ; S. N. Yi ; J. H. Na ; A. M. Green ; R. A. Taylor ; Y. J. Cho ; H. M. Cho ; S. H. Park.
- Publish Info
- 서울 : 한국물리학회, 2006.
- Material Info
- pp. 1255-1258
- Index Term-Uncontrolled
- STRUCTURAL PROPERTIES GAN GROWN SUBSTRATES USING VARIOUS ANNEALING CONDITIONS ALN BUFFER LAYERS
- Added Entry-Personal Name
- M. K. Bae
- Added Entry-Personal Name
- S. N. Yi
- Added Entry-Personal Name
- J. H. Na
- Added Entry-Personal Name
- A. M. Green
- Added Entry-Personal Name
- R. A. Taylor
- Added Entry-Personal Name
- Y. J. Cho
- Added Entry-Personal Name
- H. M. Cho
- Added Entry-Personal Name
- S. H. Park.
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60096920
MARC
008070411s2006 ULKa a ENG■022 ▼a03744884
■1001 ▼aD. H. Shin.
■245 ▼aThe Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers ▼dD. H. Shin▼eM. K. Bae▼eS. N. Yi▼eJ. H. Na▼eA. M. Green▼eR. A. Taylor▼eY. J. Cho▼eH. M. Cho▼eS. H. Park.
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 1255-1258
■653 ▼aSTRUCTURAL▼aPROPERTIES▼aGAN▼aGROWN▼aSUBSTRATES▼aUSING▼aVARIOUS▼aANNEALING▼aCONDITIONS▼aALN▼aBUFFER▼aLAYERS
■7001 ▼aM. K. Bae
■7001 ▼aS. N. Yi
■7001 ▼aJ. H. Na
■7001 ▼aA. M. Green
■7001 ▼aR. A. Taylor
■7001 ▼aY. J. Cho
■7001 ▼aH. M. Cho
■7001 ▼aS. H. Park.
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 6 (2006. 6)▼d2006, 06
■URL ▼ahttp://www.kps.or.kr
■SIS ▼aS028403▼b60077342▼h8▼s2
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