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Low-Temperature Deposition of Silicon-Nitride Layers by Using PECVD for High Efficiency Si Solar Cells
Low-Temperature Deposition of Silicon-Nitride Layers by Using PECVD for High Efficiency Si Solar Cells
상세정보
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- B. Karunagaran.
- 서명/저자
- Low-Temperature Deposition of Silicon-Nitride Layers by Using PECVD for High Efficiency Si Solar Cells / B. Karunagaran , J. P. Jeong , S. Nagarajan , S. J. Chung , E.K. Suh.
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 1250-1254
- 기타저자
- J. P. Jeong
- 기타저자
- S. Nagarajan
- 기타저자
- S. J. Chung
- 기타저자
- E.K. Suh.
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60096919
MARC
008070411s2006 ULKa a ENG■022 ▼a03744884
■1001 ▼aB. Karunagaran.
■245 ▼aLow-Temperature Deposition of Silicon-Nitride Layers by Using PECVD for High Efficiency Si Solar Cells ▼dB. Karunagaran▼eJ. P. Jeong▼eS. Nagarajan▼eS. J. Chung▼eE.K. Suh.
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 1250-1254
■653 ▼aLOWTEMPERATURE▼aDEPOSITION▼aSILICONNITRIDE▼aLAYERS▼aUSING▼aPECVD▼aHIGH▼aEFFICIENCY▼aSOLAR▼aCELLS
■7001 ▼aJ. P. Jeong
■7001 ▼aS. Nagarajan
■7001 ▼aS. J. Chung
■7001 ▼aE.K. Suh.
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 6 (2006. 6)▼d2006, 06
■URL ▼ahttp://www.kps.or.kr
■SIS ▼aS028403▼b60077342▼h8▼s2
