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Selective Epitaxial Growth of SiGe on a SOI Substrate by Using Ultra-High-Vacuum Chemical Vapor Deposition
Selective Epitaxial Growth of SiGe on a SOI Substrate by Using Ultra-High-Vacuum Chemical Vapor Deposition
상세정보
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Choi, Hoon
- 서명/저자
- Selective Epitaxial Growth of SiGe on a SOI Substrate by Using Ultra-High-Vacuum Chemical Vapor Deposition / Hoon Choi 저 , Ji Chul Bae , Dae Wha Soh , Sang Jeen Hong 공저
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 648-652
- 기타저자
- Bae, Ji Chul
- 기타저자
- Soh, Dae Wha
- 기타저자
- Hong,Sang Jeen
- Control Number
- kjul:60096685
MARC
008070406s2006 ULKa a ENG■022 ▼a03744884
■1001 ▼aChoi, Hoon
■245 ▼aSelective Epitaxial Growth of SiGe on a SOI Substrate by Using Ultra-High-Vacuum Chemical Vapor Deposition▼dHoon Choi 저▼eJi Chul Bae▼eDae Wha Soh▼eSang Jeen Hong 공저
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 648-652
■653 ▼aSELECTIVE▼aEPITAXIAL▼aGROWTH▼aSIGE▼aSOI▼aSUBSTRATE▼aUSING▼aULTRAHIGHVACUUM▼aCHEMICAL▼aVAPOR▼aDEPOSITION
■7001 ▼aBae, Ji Chul
■7001 ▼aSoh, Dae Wha
■7001 ▼aHong,Sang Jeen
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 4 (2006. 4)▼d2006, 04
■■URL ▼ahttp://www.kps.or.kr
