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Physical and Electrical Characteristics of Atomic-Layer-Deposited Hf-Silicate Thin Films Using Hf[N(CH₃)(C₂H5)]₄ and SiH[N(CH₃)₂]₃ Precursors
Physical and Electrical Characteristics of Atomic-Layer-Deposited Hf-Silicate Thin Films Using Hf[N(CH₃)(C₂H5)]₄ and SiH[N(CH₃)₂]₃ Precursors
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Chung, K. B.
- 서명/저자
- Physical and Electrical Characteristics of Atomic-Layer-Deposited Hf-Silicate Thin Films Using Hf[N(CH₃)(C₂H5)]₄ and SiH[N(CH₃)₂]₃ Precursors / K. B. Chung 저 , C. N. Whang , M.H. Cho , C. J. Yim , D.H. Ko , Y.S. Kim , M. J. Kim , J.H. Lee , N. I. Lee 공저
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 607-613
- 키워드
- PHYSICAL ELECTRICAL CHARACTERISTICS ATOMICLAYERDEPOSITED HFSILICATE FILMS USING HFNCH₃C₂H5₄ SIHNCH₃₂₃ PRECURSORS
- 기타저자
- Whang, C. N.
- 기타저자
- Cho, M.H.
- 기타저자
- Yim, C. J.
- 기타저자
- Ko, D.H.
- 기타저자
- Kim, Y.S.
- 기타저자
- Kim, M. J.
- 기타저자
- Lee, J.H.
- 기타저자
- Lee, N. I.
- Control Number
- kjul:60096678
MARC
008070406s2006 ULKa a ENG■022 ▼a03744884
■1001 ▼aChung, K. B.
■245 ▼aPhysical and Electrical Characteristics of Atomic-Layer-Deposited Hf-Silicate Thin Films Using Hf[N(CH₃)(C₂H5)]₄ and SiH[N(CH₃)₂]₃ Precursors ▼dK. B. Chung 저▼eC. N. Whang▼eM.H. Cho▼eC. J. Yim▼eD.H. Ko▼eY.S. Kim▼eM. J. Kim▼eJ.H. Lee▼eN. I. Lee 공저
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 607-613
■653 ▼aPHYSICAL▼aELECTRICAL▼aCHARACTERISTICS▼aATOMICLAYERDEPOSITED▼aHFSILICATE▼aFILMS▼aUSING▼aHFNCH₃C₂H5₄▼aSIHNCH₃₂₃▼aPRECURSORS
■7001 ▼aWhang, C. N.
■7001 ▼aCho, M.H.
■7001 ▼aYim, C. J.
■7001 ▼aKo, D.H.
■7001 ▼aKim, Y.S.
■7001 ▼aKim, M. J.
■7001 ▼aLee, J.H.
■7001 ▼aLee, N. I.
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 4 (2006. 4)▼d2006, 04
■■URL ▼ahttp://www.kps.or.kr
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