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Growth of Cubic GaN on a Nitrided AlGaAs(001) Substrate by Using Hydried Vapor Phase Epitaxy
Growth of Cubic GaN on a Nitrided AlGaAs(001) Substrate by Using Hydried Vapor Phase Epitaxy
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Lee, H. J.
- 서명/저자
- Growth of Cubic GaN on a Nitrided AlGaAs(001) Substrate by Using Hydried Vapor Phase Epitaxy / H. J. Lee 저 , M. Yang , H. S. Ahn , K. H. Kim , J. Y. Yi , K. S. Jang , J. H. Chang , H. S. Kim , C. R. Cho , S. W. Kim 공저
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 266-270
- 기타저자
- Yang, M.
- 기타저자
- Ahn, H. S.
- 기타저자
- Kim, K. H.
- 기타저자
- Yi, J. Y.
- 기타저자
- Jang, K. S.
- 기타저자
- Chang, J. H.
- 기타저자
- Kim, H. S.
- 기타저자
- Cho, C. R.
- 기타저자
- Kim, S. W.
- Control Number
- kjul:60096574
MARC
008070405s2006 ULKa a ENG■022 ▼a03744884
■1001 ▼aLee, H. J.
■245 ▼aGrowth of Cubic GaN on a Nitrided AlGaAs(001) Substrate by Using Hydried Vapor Phase Epitaxy▼dH. J. Lee 저▼eM. Yang▼eH. S. Ahn▼eK. H. Kim▼eJ. Y. Yi▼eK. S. Jang▼eJ. H. Chang▼eH. S. Kim▼eC. R. Cho▼eS. W. Kim 공저
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 266-270
■653 ▼aGROWTH▼aCUBIC▼aGAN▼aNITRIDED▼aALGAAS001▼aSUBSTRATE▼aUSING▼aHYDRIED▼aVAPOR▼aPHASE▼aEPITAXY
■7001 ▼aYang, M.
■7001 ▼aAhn, H. S.
■7001 ▼aKim, K. H.
■7001 ▼aYi, J. Y.
■7001 ▼aJang, K. S.
■7001 ▼aChang, J. H.
■7001 ▼aKim, H. S.
■7001 ▼aCho, C. R.
■7001 ▼aKim, S. W.
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 2 (2006. 2)▼d2006, 02
■■URL ▼ahttp://www.kps.or.kr
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