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Mo/siO₂/Si(100)기판위에 mocvd 법으로 성장시킨 ain 박막이용GHz대역의 fbar 제작에 관한 연구
Mo/siO₂/Si(100)기판위에 mocvd 법으로 성장시킨 ain 박막이용GHz대역의 fbar 제작에 관한 연구
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MARC
008070321s2006 ULKa a KOR■022 ▼a12294691
■1001 ▼a양충모
■245 ▼aMo/siO₂/Si(100)기판위에 mocvd 법으로 성장시킨 ain 박막이용GHz대역의 fbar 제작에 관한 연구▼d양충모▼e김성권▼e차재상▼e박구만 공저
■260 ▼a서울▼b한국조명전기설비학회▼c2006.
■300 ▼app. 7-11
■653 ▼aMOSIO₂SI100기판위에▼aMOCVD▼a성장▼a시킨▼a박막▼aFBAR▼a제작
■7001 ▼a김성권
■7001 ▼a차재상
■7001 ▼a박구만
■773 ▼t照明.電氣設備學會論文誌(Journal of the Korean Institute of Illuminatin▼g제20권 제4호 (2006년 5월)▼d2006, 05
■URL ▼ahttp://www.kiiee.or.kr
■SIS ▼aS026882▼b60066224▼h8▼s2
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