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DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel
DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel
Detailed Information
- Material Type
- 기사
- ISSN
- 15981657
- Author
- Sang Sik Choi.
- Title/Author
- DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel / Sang Sik Choi. ; Hyun Duk Yang ; Tae-Hyun Han ; Deok-Ho Cho ; Jae-Yeon Kim ; Kyu-Hwan Shim.
- Publish Info
- 서울 : 대한전자공학회, 2006.
- Material Info
- pp. 106-113
- Index Term-Uncontrolled
- DC CHARACTERISTICS PCHANNEL METALOXIDESEMICONDUCTOR FIELD EFFECT TRANSISTORS SIO.88 GEO.¹²C HETEROSTRUCTURE CHANNEL
- Added Entry-Personal Name
- Hyun Duk Yang
- Added Entry-Personal Name
- Tae-Hyun Han
- Added Entry-Personal Name
- Deok-Ho Cho
- Added Entry-Personal Name
- Jae-Yeon Kim
- Added Entry-Personal Name
- Kyu-Hwan Shim.
- Host Item Entry
- Journal of Semiconductor Technology and Science : Volume 6, Number 2, (2006 June) 2006, 06
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60094008
MARC
008070320s2006 ULKa a ENG■022 ▼a15981657
■1001 ▼aSang Sik Choi.
■245 ▼aDC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel▼dSang Sik Choi.▼eHyun Duk Yang▼eTae-Hyun Han▼eDeok-Ho Cho▼eJae-Yeon Kim▼eKyu-Hwan Shim.
■260 ▼a서울▼b대한전자공학회▼c2006.
■300 ▼app. 106-113
■653 ▼aDC▼aCHARACTERISTICS▼aPCHANNEL▼aMETALOXIDESEMICONDUCTOR▼aFIELD▼aEFFECT▼aTRANSISTORS▼aSIO.88▼aGEO.¹²C▼aHETEROSTRUCTURE▼aCHANNEL
■7001 ▼aHyun Duk Yang
■7001 ▼aTae-Hyun Han
■7001 ▼aDeok-Ho Cho
■7001 ▼aJae-Yeon Kim
■7001 ▼aKyu-Hwan Shim.
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 6, Number 2, (2006 June)▼d2006, 06
■SIS ▼aS027450▼b60054120▼h8▼s2
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