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Hydrogen Ion Implantation Mechanism in GaAs-on-insulator Wafer Fomation by Ion-cut Process
Hydrogen Ion Implantation Mechanism in GaAs-on-insulator Wafer Fomation by Ion-cut Process
Detailed Information
- 자료유형
- 기사
- ISSN
- 15981657
- 저자명
- Hyung-Joo Woo.
- 서명/저자
- Hydrogen Ion Implantation Mechanism in GaAs-on-insulator Wafer Fomation by Ion-cut Process / Hyung-Joo Woo. , Han-Woo Choi , Joon-Kon Kim.
- 발행사항
- 서울 : 대한전자공학회, 2006.
- 형태사항
- pp. 95-100
- 기타저자
- Han-Woo Choi
- 기타저자
- Joon-Kon Kim.
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60094001
MARC
008070320s2006 ULKa a ENG■022 ▼a15981657
■1001 ▼aHyung-Joo Woo.
■245 ▼aHydrogen Ion Implantation Mechanism in GaAs-on-insulator Wafer Fomation by Ion-cut Process▼dHyung-Joo Woo.▼eHan-Woo Choi▼eJoon-Kon Kim.
■260 ▼a서울▼b대한전자공학회▼c2006.
■300 ▼app. 95-100
■653 ▼aHYDROGEN▼aION▼aIMPLANTATION▼aMECHANISM▼aGAASONINSULATOR▼aWAFER▼aFOMATION▼aIONCUT▼aPROCESS
■7001 ▼aHan-Woo Choi
■7001 ▼aJoon-Kon Kim.
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 6, Number 2, (2006 June)▼d2006, 06
■SIS ▼aS027450▼b60054120▼h8▼s2
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