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Growth and Characterization of InGaN/GaN MQWs on Two Different Tpes of Substrate
Growth and Characterization of InGaN/GaN MQWs on Two Different Tpes of Substrate / Taek Su...
Growth and Characterization of InGaN/GaN MQWs on Two Different Tpes of Substrate

Detailed Information

자료유형  
 기사
ISSN  
15981657
저자명  
Taek Sung Kim.
서명/저자  
Growth and Characterization of InGaN/GaN MQWs on Two Different Tpes of Substrate / Taek Sung Kim , Jae Young Park , TranViet Cuong , Chang Hee Hong.
발행사항  
서울 : 대한전자공학회, 2006.
형태사항  
pp. 90-94
키워드  
GROWTH CHARACTERIZATION INGANGAN MQWS TWO DIFFERENT TPES SUBSTRATE
기타저자  
Jae Young Park
기타저자  
TranViet Cuong
기타저자  
Chang Hee Hong.
기본자료저록  
Journal of Semiconductor Technology and Science : Volume 6, Number 2, (2006 June) 2006, 06
모체레코드  
모체정보확인
Control Number  
kjul:60094000

MARC

 008070320s2006        ULKa    a                          ENG
■022    ▼a15981657
■1001  ▼aTaek  Sung  Kim.
■245    ▼aGrowth  and  Characterization  of  InGaN/GaN  MQWs  on  Two  Different  Tpes  of  Substrate▼dTaek  Sung  Kim▼eJae  Young  Park▼eTranViet  Cuong▼eChang  Hee  Hong.
■260    ▼a서울▼b대한전자공학회▼c2006.
■300    ▼app.  90-94
■653    ▼aGROWTH▼aCHARACTERIZATION▼aINGANGAN▼aMQWS▼aTWO▼aDIFFERENT▼aTPES▼aSUBSTRATE
■7001  ▼aJae  Young  Park
■7001  ▼aTranViet  Cuong
■7001  ▼aChang  Hee  Hong.
■773    ▼tJournal  of  Semiconductor  Technology  and  Science▼gVolume  6,  Number  2,  (2006  June)▼d2006,  06
■SIS    ▼aS027450▼b60054120▼h8▼s2

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