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Low Voltage Program/ Erase Characteristics of Si Nanocrystal Memory with Damascene Gate FinFET on Bulk Si Wafer
Low Voltage Program/ Erase Characteristics of Si Nanocrystal Memory with Damascene Gate FinFET on Bulk Si Wafer
Detailed Information
- 자료유형
- 기사
- ISSN
- 15981657
- 저자명
- Jeong-Dong Choe.
- 서명/저자
- Low Voltage Program/ Erase Characteristics of Si Nanocrystal Memory with Damascene Gate FinFET on Bulk Si Wafer / Jeong-Dong Choe. , Kyung Hwan Yeo , Young Joon Ahn , Jong Jin Lee , Se-Hoon Lee , Byung Yong Choi , Suk Kang Sung , Eun Suk Cho , Choong-Ho Lee , Dong-Won Kim , Ilsub Chung
- 발행사항
- 서울 : 대한전자공학회, 2006.
- 형태사항
- pp. 68-73
- 기타저자
- Kyung Hwan Yeo
- 기타저자
- Young Joon Ahn
- 기타저자
- Jong Jin Lee
- 기타저자
- Se-Hoon Lee
- 기타저자
- Byung Yong Choi
- 기타저자
- Suk Kang Sung
- 기타저자
- Eun Suk Cho
- 기타저자
- Choong-Ho Lee
- 기타저자
- Dong-Won Kim
- 기타저자
- Ilsub Chung
- 기타저자
- Donggun Park
- 기타저자
- Byung Il Ryu.
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60093992
MARC
008070320s2006 ULKa a ENG■022 ▼a15981657
■1001 ▼aJeong-Dong Choe.
■245 ▼aLow Voltage Program/ Erase Characteristics of Si Nanocrystal Memory with Damascene Gate FinFET on Bulk Si Wafer▼dJeong-Dong Choe.▼eKyung Hwan Yeo▼eYoung Joon Ahn▼eJong Jin Lee▼eSe-Hoon Lee▼eByung Yong Choi▼eSuk Kang Sung▼eEun Suk Cho▼eChoong-Ho Lee▼eDong-Won Kim▼eIlsub Chung
■260 ▼a서울▼b대한전자공학회▼c2006.
■300 ▼app. 68-73
■653 ▼aVOLTAGE▼aPROGRAM▼aERASE▼aCHARACTERISTICS▼aNANOCRYSTAL▼aMEMORY▼aDAMASCENE▼aGATE▼aFINFET▼aBULK▼aWAFER
■7001 ▼aKyung Hwan Yeo
■7001 ▼aYoung Joon Ahn
■7001 ▼aJong Jin Lee
■7001 ▼aSe-Hoon Lee
■7001 ▼aByung Yong Choi
■7001 ▼aSuk Kang Sung
■7001 ▼aEun Suk Cho
■7001 ▼aChoong-Ho Lee
■7001 ▼aDong-Won Kim
■7001 ▼aIlsub Chung
■7001 ▼aDonggun Park
■7001 ▼aByung Il Ryu.
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 6, Number 2, (2006 June)▼d2006, 06
■SIS ▼aS027450▼b60054120▼h8▼s2
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