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Overview of recent progress in high voltage insulated gate bipolar transistors(IGBTs)and its industrial impacts
Overview of recent progress in high voltage insulated gate bipolar transistors(IGBTs)and its industrial impacts
Detailed Information
- 자료유형
- 기사
- ISSN
- 10169288
- 저자명
- 윤종만
- 서명/저자
- Overview of recent progress in high voltage insulated gate bipolar transistors(IGBTs)and its industrial impacts / 윤종만 , 오광훈 공저
- 발행사항
- 서울 : 대한전자공학회, 2006.
- 형태사항
- pp. 91-104
- 키워드
- OVERVIEW RECENT PROGRESS HIGH VOLTAGE INSULATED GATE BIPOLAR TRANSISTORSIGBTSAND INDUSTRIAL IMPACTS
- 기타저자
- 오광훈
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60093904
MARC
008070319s2006 ULKa a KOR■022 ▼a10169288
■1001 ▼a윤종만
■245 ▼aOverview of recent progress in high voltage insulated gate bipolar transistors(IGBTs)and its industrial impacts▼d윤종만▼e오광훈 공저
■260 ▼a서울▼b대한전자공학회▼c2006.
■300 ▼app. 91-104
■653 ▼aOVERVIEW▼aRECENT▼aPROGRESS▼aHIGH▼aVOLTAGE▼aINSULATED▼aGATE▼aBIPOLAR▼aTRANSISTORSIGBTSAND▼aINDUSTRIAL▼aIMPACTS
■7001 ▼a오광훈
■773 ▼t전자공학회지(The Magazine of the IEEK)▼g제33권 제5호 (2006 5)▼d2006, 05
■URL ▼ahttp://www.ieek.or.kr
■SIS ▼aS027064▼b60014181▼h8▼s2
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