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Integrated silicon electron beam source using arrayed ultra shallow p-n junction cold cathodes
Integrated silicon electron beam source using arrayed ultra shallow p-n junction cold cathodes
Detailed Information
- 자료유형
- 학위논문
- 청구기호
- 569.216 E11i
- 저자명
- Ea Jung Yong
- 서명/저자
- Integrated silicon electron beam source using arrayed ultra shallow p-n junction cold cathodes / by Ea Jung Yong
- 발행사항
- New Jersey : The State University of New Jersey, 1990.
- 형태사항
- xxiii, 251 p. : ill ; 29 cm.
- 학위논문주기
- Thesis(Ph.D) - The State University of New Jersey : Electrical Engineering, 1990
- 서지주기
- Includes abstract and references
- 가격
- 비매품
- Control Number
- kjul:60079611
MARC
008061009s1990 us a 000a eng■090 ▼a569.216▼bE11i
■1001 ▼aEa Jung Yong
■24510▼aIntegrated silicon electron beam source using arrayed ultra shallow p-n junction cold cathodes▼dby Ea Jung Yong
■260 ▼aNew Jersey▼bThe State University of New Jersey▼c1990.
■300 ▼axxiii, 251 p.▼bill▼c29 cm.
■5021 ▼aThesis(Ph.D)▼bThe State University of New Jersey▼cElectrical Engineering▼d1990
■504 ▼aIncludes abstract and references
■653 ▼aINTEGRATED▼aSILICON▼aELECTRON▼aBEAM▼aSOURCE▼aUSING▼aARRAYED▼aULTRA▼aSHALLOW▼aPN▼aJUNCTION▼aCOLD▼aCATHODES
■9501 ▼a비매품
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