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Study on the initial stage of thin film growth on Si surfaces using STM and ISS = 走査トンネル顯微鏡及びイオン散亂分光法によるシリコン表面上薄膜成長初期過程に關する硏究
Study on the initial stage of thin film growth on Si surfaces using STM and ISS = 走査トンネル顯微鏡及びイオン散亂分光法によるシリコン表面上薄膜成長初期過程に關する硏究
Detailed Information
- 자료유형
- 학위논문
- 청구기호
- 425.8 R997s
- 저자명
- Ryu Jeong-Tak
- 서명/저자
- Study on the initial stage of thin film growth on Si surfaces using STM and ISS = 走査トンネル顯微鏡及びイオン散亂分光法によるシリコン表面上薄膜成長初期過程に關する硏究 / by Ryu Jeong-Tak
- 발행사항
- Osaka : Osaka University, 1999.
- 형태사항
- v, 127 p. ; 30 cm.
- 학위논문주기
- Thesis(Ph.D) - Osaka University, 1999
- 서지주기
- Includes references
- 가격
- 비매품
- Control Number
- kjul:60079609
MARC
008061002s1999 ja 000a eng■090 ▼a425.8▼bR997s
■1001 ▼aRyu Jeong-Tak
■24510▼aStudy on the initial stage of thin film growth on Si surfaces using STM and ISS▼x走査トンネル顯微鏡及びイオン散亂分光法によるシリコン表面上薄膜成長初期過程に關する硏究▼dby Ryu Jeong-Tak
■260 ▼aOsaka▼bOsaka University▼c1999.
■300 ▼av, 127 p.▼c30 cm.
■5021 ▼aThesis(Ph.D)▼bOsaka University▼d1999
■504 ▼aIncludes references
■653 ▼aSTUDY▼aINITIAL▼aSTAGE▼aFILM▼aGROWTH▼aSURFACES▼aUSING▼aSTM▼aISS
■9501 ▼a비매품
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