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Electrical Characteristics of CMOS Corcuit Due to Channel Region Parameters in LDMOSFET
Electrical Characteristics of CMOS Corcuit Due to Channel Region Parameters in LDMOSFET
Detailed Information
- 자료유형
- 기사
- ISSN
- 12297607
- 서명/저자
- Electrical Characteristics of CMOS Corcuit Due to Channel Region Parameters in LDMOSFET / by Nam-Soo Kim, Zhi-Yuan Cui, Hyung-Gyoo Lee, and Kyoung-Won Kim
- 발행사항
- 서울 : 한국전기전자재료학회, 2006.
- 형태사항
- pp. 99-102
- 기타저자
- Nam-Soo Kim
- 기타저자
- Zhi-Yuan Cui
- 기타저자
- Hyung-Gyoo Lee
- 기타저자
- Kyoung-Won Kim
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60078634
MARC
008060915s2006 ULKa a ENG■022 ▼a12297607
■245 ▼aElectrical Characteristics of CMOS Corcuit Due to Channel Region Parameters in LDMOSFET▼dby Nam-Soo Kim, Zhi-Yuan Cui, Hyung-Gyoo Lee, and Kyoung-Won Kim
■260 ▼a서울▼b한국전기전자재료학회▼c2006.
■300 ▼app. 99-102
■653 ▼aELECTRICAL▼aCHARACTERISTICS▼aCMOS▼aCORCUIT▼aDUE▼aCHANNEL▼aREGION▼aPARAMETERS▼aLDMOSFET
■700 ▼aNam-Soo Kim
■7001 ▼aZhi-Yuan Cui
■7001 ▼aHyung-Gyoo Lee
■7001 ▼aKyoung-Won Kim
■773 ▼tTransactions on Electrical and Electronic Materials▼gVol.7, No.3 (2006 June)▼d2006, 06
■URL ▼ahttp://kieeme.or.kr
■SIS ▼aS027474▼b60055341▼h8▼s2
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