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Dynamic characteristics of a plasma produced by Silicon-on-sapphire semiconductor bridge (SCB) under high current density conditions
Dynamic characteristics of a plasma produced by Silicon-on-sapphire semiconductor bridge (SCB) under high current density conditions
상세정보
- 자료유형
- 학위논문
- 청구기호
- 569.4 K49d
- 저자명
- Kim Jong Dae
- 서명/저자
- Dynamic characteristics of a plasma produced by Silicon-on-sapphire semiconductor bridge (SCB) under high current density conditions / Kim Jong Dae
- 발행사항
- Albuquerque, New Mexico : University of New Mexico, 1994.
- 형태사항
- xiii, 150 p. : ill ; 26 cm.
- 학위논문주기
- Thesis(Ph.D.) - University of New Mexico : Electrical and Computer engineering, 1994
- 서지주기
- includes abstract and references
- 키워드
- DYNAMIC CHARACTERISTICS PLASMA PRODUCED SILICONONSAPPHIRE SEMICONDUCTOR BRIDGE SCB CURRENT DENSITY CONDITIONS
- 가격
- 비매품
- Control Number
- kjul:60077831
MARC
008060905s1994 us a 000a eng■090 ▼a569.4▼bK49d
■1001 ▼aKim Jong Dae
■24510▼aDynamic characteristics of a plasma produced by Silicon-on-sapphire semiconductor bridge (SCB) under high current density conditions▼dKim Jong Dae
■260 ▼aAlbuquerque, New Mexico▼bUniversity of New Mexico▼c1994.
■300 ▼axiii, 150 p.▼bill▼c26 cm.
■5021 ▼aThesis(Ph.D.)▼bUniversity of New Mexico▼cElectrical and Computer engineering▼d1994
■504 ▼aincludes abstract and references
■653 ▼aDYNAMIC▼aCHARACTERISTICS▼aPLASMA▼aPRODUCED▼aSILICONONSAPPHIRE▼aSEMICONDUCTOR▼aBRIDGE▼aSCB▼aCURRENT▼aDENSITY▼aCONDITIONS
■9501 ▼a비매품
