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High Dose ６０Co r-Ray Irradiation of W/GaN Schottky Diodes
High Dose ６０Co r-Ray Irradiation of W/GaN Schottky Diodes
Detailed Information
- Material Type
- 기사
- ISSN
- 15981657
- Title/Author
- High Dose ６０Co r-Ray Irradiation of W/GaN Schottky Diodes / Jihyun Kim, F. Ren, D. Schoenfeld, S. J. Pearton, A. G. Baca, R. D. Briggs
- Publish Info
- 서울 : 대한전자공학회, 2004.
- Material Info
- pp. 124-127
- Added Entry-Personal Name
- Jihyun Kim, F. Ren, D. Schoenfeld, S. J. Pearton, A. G. Baca, R. D. Briggs
- Host Item Entry
- Journal of Semiconductor Technology and Science : Volume 4, Number 2, (2004 June) 2004, 06
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60076447
MARC
008060529s2004 ULKa a ENG■022 ▼a15981657
■245 ▼aHigh Dose ６０Co r-Ray Irradiation of W/GaN Schottky Diodes▼dJihyun Kim, F. Ren, D. Schoenfeld, S. J. Pearton, A. G. Baca, R. D. Briggs
■260 ▼a서울▼b대한전자공학회▼c2004.
■300 ▼app. 124-127
■653 ▼aHIGH▼aDOSE▼aRRAY▼aIRRADIATION▼aWGAN▼aSCHOTTKY▼aDIODES
■700 ▼aJihyun Kim, F. Ren, D. Schoenfeld, S. J. Pearton, A. G. Baca, R. D. Briggs
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 4, Number 2, (2004 June)▼d2004, 06
■URL ▼ahttp://www.jsts.org
■SIS ▼aS013702▼b60054120▼h8▼s2
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