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A-High Density 64k-Bit One-Time Programmable ROM Array with 3-Transistor Cell Standard CMOS Gate-Oxide Antifuse
A-High Density 64k-Bit One-Time Programmable ROM Array with 3-Transistor Cell Standard CMOS Gate-Oxide Antifuse
Detailed Information
- Material Type
- 기사
- ISSN
- 15981657
- Title/Author
- A-High Density 64k-Bit One-Time Programmable ROM Array with 3-Transistor Cell Standard CMOS Gate-Oxide Antifuse / Hyouk-Kyu Cha, Jinbong Kim, Kwyro Lee
- Publish Info
- 서울 : 대한전자공학회, 2004.
- Material Info
- pp. 106-109
- Index Term-Uncontrolled
- AHIGH DENSITY 64KBIT ONETIME PROGRAMMABLE ARRAY 3TRANSISTOR CELL STANDARD CMOS GATEOXIDE ANTIFUSE
- Added Entry-Personal Name
- Hyouk-Kyu Cha, Jinbong Kim, Kwyro Lee
- Host Item Entry
- Journal of Semiconductor Technology and Science : Volume 4, Number 2, (2004 June) 2004, 06
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60076442
MARC
008060529s2004 ULKa a ENG■022 ▼a15981657
■245 ▼aA-High Density 64k-Bit One-Time Programmable ROM Array with 3-Transistor Cell Standard CMOS Gate-Oxide Antifuse▼dHyouk-Kyu Cha, Jinbong Kim, Kwyro Lee
■260 ▼a서울▼b대한전자공학회▼c2004.
■300 ▼app. 106-109
■653 ▼aAHIGH▼aDENSITY▼a64KBIT▼aONETIME▼aPROGRAMMABLE▼aARRAY▼a3TRANSISTOR▼aCELL▼aSTANDARD▼aCMOS▼aGATEOXIDE▼aANTIFUSE
■700 ▼aHyouk-Kyu Cha, Jinbong Kim, Kwyro Lee
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 4, Number 2, (2004 June)▼d2004, 06
■URL ▼ahttp://www.jsts.org
■SIS ▼aS013702▼b60054120▼h8▼s2
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