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Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Detailed Information
- 자료유형
- 기사
- ISSN
- 15981657
- 서명/저자
- Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors / Moongyu Jang, Yakyeon Kim, Jaeheon Shin, Seongjae Lee, Kyoungwan Park
- 발행사항
- 서울 : 대한전자공학회, 2004.
- 형태사항
- pp. 94-99
- 키워드
- NOVEL PROPERTIES ERBIUMSILICIDED NTYPE SCHOTTKY BARRIER METALOXIDE SEMICONDUCTOR FIELDEFFECT TRANSISTORS
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60076439
MARC
008060529s2004 ULKa a ENG■022 ▼a15981657
■245 ▼aNovel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors▼dMoongyu Jang, Yakyeon Kim, Jaeheon Shin, Seongjae Lee, Kyoungwan Park
■260 ▼a서울▼b대한전자공학회▼c2004.
■300 ▼app. 94-99
■653 ▼aNOVEL▼aPROPERTIES▼aERBIUMSILICIDED▼aNTYPE▼aSCHOTTKY▼aBARRIER▼aMETALOXIDE▼aSEMICONDUCTOR▼aFIELDEFFECT▼aTRANSISTORS
■700 ▼aMoongyu Jang, Yakyeon Kim, Jaeheon Shin, Seongjae Lee, Kyoungwan Park
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 4, Number 2, (2004 June)▼d2004, 06
■URL ▼ahttp://www.jsts.org
■SIS ▼aS013702▼b60054120▼h8▼s2
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