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Time Evolution of a High temperature GaN Epilayer Grown on a Low-temperature GaN Buffer Layer using a Low-pressure MOCVD
Time Evolution of a High temperature GaN Epilayer Grown on a Low-temperature GaN Buffer Layer using a Low-pressure MOCVD
Detailed Information
- 자료유형
- 기사
- ISSN
- 12297607
- 서명/저자
- Time Evolution of a High temperature GaN Epilayer Grown on a Low-temperature GaN Buffer Layer using a Low-pressure MOCVD / Kyunghwa Chang, Sung Il Cho, Myoung Seok Kwon
- 발행사항
- 서울 : 한국전기전자재료학회, 2007.
- 형태사항
- pp. 36-41
- 키워드
- EVOLUTION HIGH TEMPERATURE GAN EPILAYER GROWN LOWTEMPERATURE BUFFER LAYER USING LOWPRESSURE MOCVD
- 기타저자
- Kyunghwa Chang
- 기타저자
- Sung Il Cho
- 기타저자
- Myoung Seok Kwon
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60076038
MARC
008060518s2007 ULKa a ENG■022 ▼a12297607
■245 ▼aTime Evolution of a High temperature GaN Epilayer Grown on a Low-temperature GaN Buffer Layer using a Low-pressure MOCVD▼dKyunghwa Chang, Sung Il Cho, Myoung Seok Kwon
■260 ▼a서울▼b한국전기전자재료학회▼c2007.
■300 ▼app. 36-41
■653 ▼aEVOLUTION▼aHIGH▼aTEMPERATURE▼aGAN▼aEPILAYER▼aGROWN▼aLOWTEMPERATURE▼aBUFFER▼aLAYER▼aUSING▼aLOWPRESSURE▼aMOCVD
■700 ▼aKyunghwa Chang
■7001 ▼aSung Il Cho
■7001 ▼aMyoung Seok Kwon
■773 ▼tTransactions on Electrical and Electronic Materials▼gVol.7, No.1 (2006 February)▼d2007, 02
■URL ▼ahttp://www.kieeme.or.kr
■SIS ▼aS025127▼b60055341▼h8▼s2
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