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Electrical Switching Characteristics of Ge₁Se₁Te₂Chalcogenide Thin Film for Phase Change Memory
Electrical Switching Characteristics of Ge₁Se₁Te₂Chalcogenide Thin Film for Phase Change Memory
Detailed Information
- 자료유형
- 기사
- ISSN
- 12297607
- 서명/저자
- Electrical Switching Characteristics of Ge₁Se₁Te₂Chalcogenide Thin Film for Phase Change Memory / Jae-Min Lee, Cheol-Ho Yeo, Kyung Shin, Hong-Bay Chung
- 발행사항
- 서울 : 한국전기전자재료학회, 2007.
- 형태사항
- pp. 7-11
- 기타저자
- Jae-Min Lee
- 기타저자
- Cheol-Ho Yeo
- 기타저자
- Kyung Shin
- 기타저자
- Hong-Bay Chung
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60076031
MARC
008060518s2007 ULKa a ENG■022 ▼a12297607
■245 ▼aElectrical Switching Characteristics of Ge₁Se₁Te₂Chalcogenide Thin Film for Phase Change Memory▼dJae-Min Lee, Cheol-Ho Yeo, Kyung Shin, Hong-Bay Chung
■260 ▼a서울▼b한국전기전자재료학회▼c2007.
■300 ▼app. 7-11
■653 ▼aELECTRICAL▼aSWITCHING▼aCHARACTERISTICS▼aGE₁SE₁TE₂CHALCOGENIDE▼aFILM▼aPHASE▼aCHANGE▼aMEMORY
■700 ▼aJae-Min Lee
■7001 ▼aCheol-Ho Yeo
■7001 ▼aKyung Shin
■7001 ▼aHong-Bay Chung
■773 ▼tTransactions on Electrical and Electronic Materials▼gVol.7, No.1 (2006 February)▼d2007, 02
■URL ▼ahttp://www.kieeme.or.kr
■SIS ▼aS025127▼b60055341▼h8▼s2
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